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IRLR110A

Features: Avalanche Rugged TechnologyRugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 100VLower RDS(ON): 0.336W (Typ.)Specifications Symbol Characteristic Value Units VDSS Drain-to-...

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SeekIC No. : 004378447 Detail

IRLR110A: Features: Avalanche Rugged TechnologyRugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 100VLower RDS(O...

IRLR110A Data Sheet

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Part Number:
IRLR110A
Supply Ability:
5000

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  • 1~5000
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Total Cost: $ 0.00

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Product Details

Description



Features:

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10A (Max.) @ VDS = 100V
Lower RDS(ON): 0.336W (Typ.)




Specifications

Symbol
 Characteristic
Value
Units
VDSS
 Drain-to-Source Voltage
100
V
ID
 Continuous Drain Current (TC=25°C)
4.7
A
Continuous Drain Current (TC=100°C)
2
IDM
 Drain Current-Pulsed (1)
16
A
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulsed Avalanche Energy (2)
58
mJ
IAR
 Avalanche Current (1)
4.7
A
EAR
 Repetitive Avalanche Energy (1)
2.2
mJ
dv/dt
 Peak Diode Recovery dv/dt (2)
6.5
V/ns
PD
 Total Power Dissipation (TA=25°C)*
2.5
W
Total Power Dissipation (TC=25°C)
Linear Derating Factor
22
0.18
W
W/°C
TJ , TSTG
 Operating Junction and
Storage Temperature Range
- 55 to +150
°C
TL
 Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
300





Description

The IRLR110A is one of the IRLR110 series. The IRLR110A is a hexfet power mosfet.Third generation hexfets from international rectifier provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost-effectiveness.

Features of the IRLR110A are:(1)dynamic dv/dt rating; (2)repetitive avalanche rated; (3)surface mount; (4)straight lead; (5)available in tape and reel; (6)logic-level gate drive; (7)Rds(on)Specified at Vgs=4V and 5V.

The absolute maximum ratings of the IRLR110A can be summarized as:(1)continuous drain current,VGS@5.0V:4.3A; (2)continuous driain current,VGS@5.0V:2.7A; (3)pulsed drain current:17A; (4)power dissipation:25W; (5)power dissipation(PCB Mount)**:2.5W; (6)linear derating factor:0.20W/; (7)linear derating factor(PCB Mount)**:0.020W/; (8)gate-to-source voltage:±10V; (9)avalanche current:4.3A; (10)repetitive avalanche energy:2.5mj; (11)peak diode recovery dv/dt:5.5V/ns; (12)junction and storage temperature range:-55~150; (13)soldering temperature,for 10 seconds :260(1.6mm from case).If you want to know more information such as the electrical characteristics, please download the datasheet in www.seekic.com or www.chinaicmart.com.






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