IRLR024ZPBF

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : DPAK
Packaging : Tube
Gate-Source Breakdown Voltage : 16 V
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 16 A
Resistance Drain-Source RDS (on) : 100 mOhms


Features:

` Logic Level
` Advanced Process Technology
` Ultra Low On-Resistance
`175 Operating Temperature
` Fast Switching
` Repetitive Avalanche Allowed up to Tjmax
` Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V (Silicon Limited)	16	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V	11
IDM	Pulsed Drain Current 􀀀	64
PD @TC = 25	Power Dissipation	35	W
	Linear Derating Factor	0.23	W/
VGS	Gate-to-Source Voltage	± 16	V
EAS (Thermally limited)	Single Pulse Avalanche Energy	25	mJ
EAS (Tested )	Single Pulse Avalanche Energy Tested Value	25
IAR	Avalanche Current 􀀀	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
TJ,TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

Description

Specifically designed for Automotive applications, this HEXFET^® Power MOSFET IRLR024ZPbF  utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of IRLR024ZPbF  combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications

Parameters:

Technical/Catalog Information	IRLR024ZPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	16A
Rds On (Max) @ Id, Vgs	58 mOhm @ 9.6A, 10V
Input Capacitance (Ciss) @ Vds	380pF @ 25V
Power - Max	35W
Packaging	Tube
Gate Charge (Qg) @ Vgs	9.9nC @ 5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRLR024ZPBF IRLR024ZPBF