IRLR024NPBF

MOSFET

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SeekIC No. : 00148010 Detail

IRLR024NPBF: MOSFET

floor Price/Ceiling Price

US $ .24~.71 / Piece | Get Latest Price
Part Number:
IRLR024NPBF
Mfg:
International Rectifier
Supply Ability:
5000

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  • 100~250
  • Unit Price
  • $.71
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  • Processing time
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Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : 16 V Continuous Drain Current : 17 A
Resistance Drain-Source RDS (on) : 110 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : DPAK
Packaging : Tube
Gate-Source Breakdown Voltage : 16 V
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 17 A
Resistance Drain-Source RDS (on) : 110 mOhms


Specifications

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12
IDM Pulsed Drain Current 72
PD @TC = 25°C C Power Dissipation 45 W
Linear Derating Factor 0.3 W/°C
VGS Gate-to-Source Voltage ±16 V
EAS Single Pulse Avalanche Energy 68 mJ
IAR Avalanche Current 11 A
EAR Repetitive Avalanche Energy 4.5 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175 °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )



Description

Fifth Generation HEXFET® Power MOSFETs from International Rectifier IRLR024NPbF utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLR024NPbF design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK IRLR024NPbF is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.




Parameters:

Technical/Catalog InformationIRLR024NPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C17A
Rds On (Max) @ Id, Vgs65 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 480pF @ 25V
Power - Max45W
PackagingTube
Gate Charge (Qg) @ Vgs15nC @ 5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRLR024NPBF
IRLR024NPBF



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