MOSFET
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Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology `Lower Input Capacitance`Impro...
Features: ·Logic Level Gate Drive·Ultra Low On-Resistance·Surface Mount (IRLR3410)·Straight Lead (...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
Gate-Source Breakdown Voltage : | 16 V | Continuous Drain Current : | 17 A | ||
Resistance Drain-Source RDS (on) : | 110 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Tube |
Parameter | Max. | Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 17 | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 12 | |
IDM | Pulsed Drain Current | 72 | |
PD @TC = 25°C | C Power Dissipation | 45 | W |
Linear Derating Factor | 0.3 | W/°C | |
VGS | Gate-to-Source Voltage | ±16 | V |
EAS | Single Pulse Avalanche Energy | 68 | mJ |
IAR | Avalanche Current | 11 | A |
EAR | Repetitive Avalanche Energy | 4.5 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | °C |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
Fifth Generation HEXFET® Power MOSFETs from International Rectifier IRLR024NPbF utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLR024NPbF design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK IRLR024NPbF is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Technical/Catalog Information | IRLR024NPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 17A |
Rds On (Max) @ Id, Vgs | 65 mOhm @ 10A, 10V |
Input Capacitance (Ciss) @ Vds | 480pF @ 25V |
Power - Max | 45W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 15nC @ 5V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRLR024NPBF IRLR024NPBF |