IRLIZ44G

MOSFET N-CH 60V 30A TO220FP

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IRLIZ44G Picture
SeekIC No. : 003432835 Detail

IRLIZ44G: MOSFET N-CH 60V 30A TO220FP

floor Price/Ceiling Price

US $ 1.08~1.08 / Piece | Get Latest Price
Part Number:
IRLIZ44G
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1000
  • Unit Price
  • $1.08
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/6/11

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Product Details

Quick Details

Series: - Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 30A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 28 mOhm @ 18A, 5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) @ Vgs: 66nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 3300pF @ 25V
Power - Max: 48W Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: TO-220-3    

Description

Series: -
Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 60V
Vgs(th) (Max) @ Id: 2V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 30A
Power - Max: 48W
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220-3
Gate Charge (Qg) @ Vgs: 66nC @ 5V
Input Capacitance (Ciss) @ Vds: 3300pF @ 25V
Rds On (Max) @ Id, Vgs: 28 mOhm @ 18A, 5V


Features:

• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• Logic-Level Gate Drive
• RDS(on) Specified at VGS = 4 V and 5 V
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free





Specifications

PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
60
± 10
V
Continuous Drain Current VGS at 10V TC = 25
TC = 100
ID

IDM
30
21
120
A
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque





TC = 25 °C

for 10 s
6-32 or M3 screw
EAS
PD
dV/dt
TJ, Tstg
0.32
400
48
4.5
- 55 to + 175
300d
10
1.1
W/°C
mJ
W
V/ns
°C
lbf ` in
N ` m





Description

Third generation Power MOSFETs from Vishay IRLIZ44G provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.






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