IRLI2203N

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 1V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Input Capacitance (Ciss) @ Vds: 3500pF @ 25V
Package / Case: TO-220-3 Full Pack
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 61A
Supplier Device Package: TO-220AB Full-Pak
Gate Charge (Qg) @ Vgs: 110nC @ 4.5V
Power - Max: 47W
Rds On (Max) @ Id, Vgs: 7 mOhm @ 37A, 10V


Features:

·Logic-Level Gate Drive
·Advanced Process Technology
·Isolated Package
·High Voltage Isolation = 2.5KVRMS …
·Sink to Lead Creepage Dist. = 4.8mm
·Fully Avalanche Rated


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	61	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	43
IDM	Pulsed Drain Current	400
PD @TC = 25°C	Power Dissipation	47	W
	Linear Derating Factor	0.31	W/°C
VGS	Gate-to-Source Voltage	±16	V
EAS	Single Pulse Avalanche Energy	390	mJ
IAR	Avalanche Current	60	A
EAR	Repetitive Avalanche Energy	4.7	mJ
dv/dt	Peak Diode Recovery dv/dt	1.2	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	oC
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf•in (1.1N•m)

Description

Fifth Generation HEXFETs from International Rectifier IRLI2203N utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLI2203N design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.