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IRLI2203G

Features: · Advanced Process Technology· Ultra Low On-Resistance· Isolated Package· High Voltage Isolation = 2.5KVRMS· Sink to Lead Creepage Dist. = 4.8mm· Logic-Level Gate Drive· RDS(on) Specified at VGS=5.0V & 10VSpecificationsID @ TC = 25°C Continuous Drain Current, VGS @ 10V .................

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IRLI2203G: Features: · Advanced Process Technology· Ultra Low On-Resistance· Isolated Package· High Voltage Isolation = 2.5KVRMS· Sink to Lead Creepage Dist. = 4.8mm· Logic-Level Gate Drive· RDS(on) Specified ...

IRLI2203G Data Sheet

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Part Number:
IRLI2203G
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
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Product Details

Description



Features:

· Advanced Process Technology
· Ultra Low On-Resistance
· Isolated Package
· High Voltage Isolation = 2.5KVRMS
· Sink to Lead Creepage Dist. = 4.8mm
· Logic-Level Gate Drive
· RDS(on) Specified at VGS=5.0V & 10V


Specifications

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ...............52 A
ID @ TC = 100°C Continuous Collector Current, VGS @ 10V .......37 A
IDM Pulsed Drain Current ..........................................................210 A
PD @TC = 25°C Power Dissipation .............................................48 W
Linear Derating Factor .......................................................0.32 W/°C
VGS Gate-to-Source Voltage ......................................................±20 V
EAS Single Pulse Avalanche Energy ...........................................90 mJ
IAR Avalanche Current ................................................................31 A
EAR Repetitive Avalanche Energy .............................................4.8 mJ
dv/dt Peak Diode Recovery dv/dt ..........................................4.5 V/ns
TJ Operating Junction and .........................................-55 to + 175 °C
TSTG Storage Temperature Range .............................-55 to + 175 °C
Soldering Temperature, for 10 seconds ....300 (1.6mm from case) °C
Mounting torque, 6-32 or M3 screw. ......................10 lbf•in (1.1N•m)


Description

Fourth Generation HEXFETs from International Rectifier IRLI2203G utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLI2203G design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.




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