MOSFET N-CH 55V 58A TO220FP
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Series: | HEXFET® | Manufacturer: | International Rectifier | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 55V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 58A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 31A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 2V @ 250µA | Gate Charge (Qg) @ Vgs: | 130nC @ 5V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 5000pF @ 25V | ||
Power - Max: | 63W | Mounting Type: | Through Hole | ||
Package / Case: | TO-220-3 Full Pack | Supplier Device Package: | TO-220AB Full-Pak |
Parameter | Max. | Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 58 | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 41 | A |
IDM | Pulsed Drain Current | 360 | A |
PD @TC = 25°C | Power Dissipation | 60 | W |
Linear Derating Factor | 0.42 | W/°C | |
VGS | Gate-to-Source Voltage | ±16 | V |
EAS | Single Pulse Avalanche Energy | 500 | mJ |
IAR | Avalanche Current | 54 | A |
EAR | Repetitive Avalanche Energy | 6.3 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to 175 | |
Soldering Temperature, for 10 seconds | 300(1.6mm from case) | ||
Mounting torque, 6-32 or M3 screw. | 10 lbf•in (1.1N•m) |
Fifth Generation HEXFETs from International Rectifier IRLI2505 utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLI2505 design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.
The moulding compound IRLI2505 used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.