IRLIZ34N

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 2V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 22A
Power - Max: 37W
Package / Case: TO-220-3 Full Pack
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Gate Charge (Qg) @ Vgs: 25nC @ 5V
Input Capacitance (Ciss) @ Vds: 880pF @ 25V
Supplier Device Package: TO-220AB Full-Pak
Rds On (Max) @ Id, Vgs: 35 mOhm @ 12A, 10V


Features:

· Logic-Level Gate Drive
· Advanced Process Technology
· Isolated Package
· High Voltage Isolation = 2.5KVRMS
· Sink to Lead Creepage Dist. = 4.8mm
· Fully Avalanche Rated


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	22	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	15	A
IDM	Pulsed Drain Current	110	A
PD @TA = 25°C	Power Dissipation	37	A
PD @TC = 25°C	Power Dissipation	43	W
	Linear Derating Factor	0.24	W/°C
VGS	Gate-to-Source Voltage	±16	V
EAS	Single Pulse Avalanche Energy	110	mJ
IAR	Avalanche Current	16	A
EAR	Repetitive Avalanche Energy	3.7	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ,TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)	°C

Description

Fifth Generation HEXFETs from International Rectifier IRLIZ34N utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLIZ34N design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.