Configuration
:
Maximum Operating Temperature
:
Transistor Polarity
: N-Channel
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-220FP
Gate-Source Breakdown Voltage
: 16 V
Drain-Source Breakdown Voltage
: 55 V
Continuous Drain Current
: 14 A
Resistance Drain-Source RDS (on)
: 105 mOhms
Features: SpecificationsDescription The IRLIZ24NPbF is designed as power MOSFET.The IRLIZ24NPbF provide the designer with an extremely efficient device for use in a wide variety of applications.
The IRLIZ24NPbF has seven features.The first one is that IRLIZ24NPbF would have logic-level gate drive.The second one is that IRLIZ24NPbF would have advanced process technology.The third one is that it would have isolated package.The fourth one is that it would have high voltage isolation which means the value would be 2.5KVRMS.The fifth one is that it would have sink to lead creepage dist which means the value would be 4.8mm.The sixth one is that it would have fully avalanche rated.The last one is that it would be lead free.That are all the features.
Some absolute maximum ratings of IRLIZ24NPbF have been concluded into several points as follow.The first one is about its continuous drain current, Vgs @ 10V, Tc=25°C which would be 14A.The second one is about its continuous drain current, Vgs @ 10V, Tc=100°C which would be 9.9A.The third one is about its pulse drain current which would be 72A.The fourth one is about its power dissipation which would be 26W.The fifth one is about its linear derating factor which would be 0.17W/°C.The sixth one is about its gate-to source voltage which would be +/-16V.The seventh one is about its signal pulse avalanche energy which would be 68mJ.The eighth one is about its avalabche current which would be 11A.The ninth one is about its repetitive avalanche energy which would be 4.5mJ.The next one is about its peak diode recovery dv/dt which would be 4.6 V/ns.The next one is about its operating junction and storage temperature range which would be from -55 to +175°C.The next one is about its soldering temperature, for 10 sec which would be 300°C.
And also there are some electrical characteristics of IRLIZ24NPbF @ Tj=25°C (unless otherwise specified) about it.The first one is about its drain to source breakdown voltage which would be min 55V with condition of Vgs=0V, Id=250uA.The second one is about its breakdown voltage temp. coefficient which would be typ 0.061V/°C.The third one is about its static drain to source on resistance which would be max 0.060 with condition of Vgs=10V, Id=8.4A.And so on.For more information please contact us.
Parameters: | Technical/Catalog Information | IRLIZ24NPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 14A |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 8.4A, 10V |
| Input Capacitance (Ciss) @ Vds | 480pF @ 25V |
| Power - Max | 26W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 15nC @ 5V |
| Package / Case | TO-220-3 Fullpak (Straight Leads) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRLIZ24NPBF
IRLIZ24NPBF
|
IRLIZ24NPBF Data Sheet
