Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: Through Hole
Transistor Polarity
: P-Channel
Packaging
: Tube
Gate-Source Breakdown Voltage
: 20 V
Package / Case
: TO-220FP
Resistance Drain-Source RDS (on)
: 170 mOhms
Drain-Source Breakdown Voltage
: - 55 V
Continuous Drain Current
: - 14 A
Features: Advanced Process Technology
Key Parameters Optimized for Class-D Audio Amplifier Applications
Low RDSON for Improved Efficiency
Low Qg and Qsw for Better THD and Improved Efficiency
Low Qrr for Better THD and Lower EMI
175 Operating Junction Temperature for Ruggedness
Repetitive Avalanche Capability for Robustness and Reliability
Lead-FreeSpecifications
| Symbol |
Parameter |
Max. |
Units |
| VDS |
Drain-Source Voltage |
-55 |
V
|
| VGS |
Gate-to-Source Voltage |
±20 |
| ID @ TC = 25 |
Continuous Drain Current, VGS @ 10V |
-14 |
A |
| ID @TC= 100 |
Continuous Drain Current, VGS @ 10V |
-10 |
| IDM |
Pulsed Drain Current1 |
-60 |
| PD @TC = 25 |
Power Dissipation |
33 |
W |
| PD@TC = 100 |
Power Dissipation |
20 |
| |
Linear Derating Factor |
0.26 |
W/ |
| TJ |
Operating Junction and |
-40 to + 175 |
|
| TSTG |
Storage Temperature Range |
| |
Mounting torque, 6-32 or M3 screw |
10 (1.1) |
10lb`in (1.1N`m) |
DescriptionThis Digital Audio HEXFET® IRLIB9343PbF is specifically designed for Class-D audio amplifier applications. This MosFET IRLIB9343PbF utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175 operating junction temperature and repetitive avalanche capability.
These features of IRLIB9343PbF combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
Parameters: | Technical/Catalog Information | IRLIB9343PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 14A |
| Rds On (Max) @ Id, Vgs | 105 mOhm @ 3.4A, 10V |
| Input Capacitance (Ciss) @ Vds | 660pF @ 50V |
| Power - Max | 33W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 47nC @ 10V |
| Package / Case | TO-220-3 Fullpak (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRLIB9343PBF
IRLIB9343PBF
|
IRLIB9343PBF Data Sheet
