FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 1V @ 250µA
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 42nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 19A
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 39W
Package / Case: TO-220-3 Full Pack
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Supplier Device Package: TO-220AB Full-Pak
Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
Input Capacitance (Ciss) @ Vds: 740pF @ 50V
Features: ` Advanced Process Technology
` Key Parameters Optimized for Class-D Audio Amplifier Applications
` Low RDSON for Improved Efficiency
` Low Qg and Qsw for Better THD and Improved Efficiency
` Low Qrr for Better THD and Lower EMI
` 175 Operating Junction Temperature for Ruggedness
` Repetitive Avalanche Capability for Robustness and ReliabilitySpecifications
| |
Parameter |
Max. |
Units |
| VDS |
Drain-to-Source Voltage |
55 |
V |
| VGS |
Gate-to-Source Voltage |
±20 |
| ID @ TC =25 |
Continuous Drain Current, VGS @ 10V |
19 |
A |
| ID @ TC =100 |
Continuous Drain Current, VGS @ 10V |
13 |
| IDM |
Pulsed Drain Current� |
80 |
| PD @TC =25 |
Power Dissipation |
39 |
W |
| PD @TC =100 |
Power Dissipation |
20 |
| |
Linear Derating Factor |
0.26 |
W/ |
TJ
TSTG |
Operating Junction and Storage Temperature Range |
-40 to + 175 |
|
| |
Mounting torque, 6-32 or M3 screw |
10lbin (1.1N`m) |
|
DescriptionThis Digital Audio HEXFET® IRLIB4343 is specifically designed for Class-D audio amplifier applications. This MosFET IRLIB4343 utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175 operating junction temperature and repetitive avalanche capability.These features of IRLIB4343 combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
IRLIB4343 Data Sheet
