IRLI640GPBF

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 10 V
Resistance Drain-Source RDS (on) : 0.18 Ohms
Continuous Drain Current : 9.9 A
Package / Case : TO-220 Full-Pak


Description

The IRLI640GPbF is designed as the third generation HEXFET from international rectifier which provide the designers with the best combination of fast switching, ruggedized device design, low on-resistance and cost-efectiveness.

The IRLI640GPbF has eight features. (1)Isolated package. (2)High voltage isolation 2.5KVrms. (3)Sink lead creepage dist. 4.8mm. (4)Logic level gate drive. (5)Rds(on) specified at Vgs=4V & 5V. (6)Fast switching. (7)Ease of paralleling. (8)Lead free. That are all the main features.

Some absolute maximum ratings of IRLI640GPbF have been concluded into several points as follow. (1)Its continuous drain current Vgs at 5.0V would be max 9.9A at 25°C and would be 6.3A at 100°C. (2)Its pulsed drain current would be 40A. (3)Its power dissipation would be 40W. (4)Its linear derating factor would be 0.32W/°C. (5)Its gate to source voltage would be +/-10V. (6)Its single pulse avalanche energy would be 290mJ. (7)Its avalanche current would be 9.9A. (8)Its repetitive avalanche energy would be 4.0mJ. (9)Its peak diode recovery dv/dt would be 5.0V/ns. (10)Its operating junction and storage temperature range would be from -55°C to +150°C. (11)Its mounting torque, 6-32 or M3 screw would be 10 lbf.in (1.1N.m). It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of IRLI640GPbF are concluded as follow. (1)Its drain to source breakdown voltage would be min 200V. (2)Its breakdown voltage temperature coefficient would be typ 0.27V/°C. (3)Its static drain to source on-resistance would be max 0.18 ohms with condition of Vgs=5.0V and Id=5.9A and it would be max 0.27 ohms with condition os Vgs=4.0V and Id=5.0A. (4)Its gate threshold voltage would be min 1.0V and max 2.0V. (5)Its forward transconductance would be min 16S. And so on. If you have any question or suggestion or want to know more information please contact us for IRLI640GPbF details. Thank you!