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IRLI640A

Features: Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area150°C Operating Temperature Lower Leakage Current: 10mA (Max.) @ VDS = 200VLower RDS(ON): 0.145W (Typ.)Specifications Symbol Characteristic Value ...

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IRLI640A: Features: Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area150°C Operating Temperature Lower Leakage Current: 10mA (...

IRLI640A Data Sheet

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Part Number:
IRLI640A
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
150°C Operating Temperature
Lower Leakage Current: 10mA (Max.) @ VDS = 200V
Lower RDS(ON): 0.145W (Typ.)


Specifications

Symbol
 Characteristic
Value
Units
VDSS
 Drain-to-Source Voltage
200
V
ID
 Continuous Drain Current (TC=25°C)
18
A
Continuous Drain Current (TC=100°C)
11.4
IDM
 Drain Current-Pulsed (1)
63
A
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulsed Avalanche Energy (2)
64
mJ
IAR
 Avalanche Current (1)
18
A
EAR
 Repetitive Avalanche Energy (1)
11
mJ
dv/dt
 Peak Diode Recovery dv/dt (3)
5
V/ns
PD
Total Power Dissipation (TA=25°C)*
3.1
W
Total Power Dissipation (TC=25°C)
Linear Derating Factor
110
0.88
W
W/°C
TJ , TSTG
 Operating Junction and
Storage Temperature Range
- 55 to +175
°C
TL
 Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
300



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