Configuration
:
Maximum Operating Temperature
:
Transistor Polarity
: N-Channel
Drain-Source Breakdown Voltage
: 100 V
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-220FP
Gate-Source Breakdown Voltage
: 16 V
Continuous Drain Current
: 20 A
Resistance Drain-Source RDS (on)
: 63 mOhms
Features: SpecificationsDescription The IRLI540NPbF Specifically designed for Automotive applications, these HEXFET® Power MOSFET IRLI540NPbF's in SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET IRLI540NPbF's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. This surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
The features of IRLI540NPbF are Advanced Process Technology, Ultra Low On-Resistance, N Channel MOSFET, Surface Mount, Available in Tape & Reel, 150°C Operating Temperature, Automotive [Q101] Qualified, Lead-Free.
The parameters of the IRLI540NPbF are VGS (Gate-to-Source Voltage)=±16V, ID @ TA = 25°C (Continuous Drain Current, VGS @ 10V(Surface mounted on 1 in. square Cu board, steady state.))=23A, ID @ TA = 70°C (Continuous Drain Current, VGS @ 10V )=16A, PD @TA = 25°C(Power Dissipation )=5.4W, IDM (Pulsed Drain Current)=120A, EAS (Single Pulse Avalanche Energy)=310mJ, TJ (Operating Junction and)= -55 to + 175°C=TSTG( Storage Temperature Range Soldering Temperature, for 10 seconds ), RJC( Junction-to-Case )=2.8°C/W, RJA( Junction-to-Ambient )=65°C/W.
Parameters: | Technical/Catalog Information | IRLI540NPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 23A |
| Rds On (Max) @ Id, Vgs | 44 mOhm @ 12A, 10V |
| Input Capacitance (Ciss) @ Vds | 1800pF @ 25V |
| Power - Max | 54W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 74nC @ 5V |
| Package / Case | TO-220-3 Fullpak (Straight Leads) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRLI540NPBF
IRLI540NPBF
|
IRLI540NPBF Data Sheet
