IRLI540N

MOSFET N-CH 100V 23A TO220FP

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SeekIC No. : 003432706 Detail

IRLI540N: MOSFET N-CH 100V 23A TO220FP

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Part Number:
IRLI540N
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/12

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 23A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 44 mOhm @ 12A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) @ Vgs: 74nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1800pF @ 25V
Power - Max: 54W Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220AB Full-Pak    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 2V @ 250µA
Series: HEXFET®
Power - Max: 54W
Packaging: Tube
Mounting Type: Through Hole
Input Capacitance (Ciss) @ Vds: 1800pF @ 25V
Package / Case: TO-220-3 Full Pack
Current - Continuous Drain (Id) @ 25° C: 23A
Manufacturer: International Rectifier
Gate Charge (Qg) @ Vgs: 74nC @ 5V
Supplier Device Package: TO-220AB Full-Pak
Rds On (Max) @ Id, Vgs: 44 mOhm @ 12A, 10V


Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 23 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 16 A
IDM Pulsed Drain Current 120 A
PD @TC = 25°C Power Dissipation 54 W
  Linear Derating Factor 0.36 W/°C
VGS Gate-to-Source Voltage ±16 V
EAS Single Pulse Avalanche Energy 310 mJ
IAR Avalanche Current 18 A
EAR Repetitive Avalanche Energy 5.4 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ,TSTG Operating Junction
Storage Temperature Range
-55 to 175
  Soldering Temperature, for 10 seconds 300(1.6mm from case)
  Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)  



Description

Fifth Generation HEXFETs from International Rectifier IRLI540N utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLI540N design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.




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