IRLI530N

MOSFET N-CH 100V 12A TO220FP

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SeekIC No. : 003432704 Detail

IRLI530N: MOSFET N-CH 100V 12A TO220FP

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Part Number:
IRLI530N
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/22

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 12A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 100 mOhm @ 9A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) @ Vgs: 34nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 800pF @ 25V
Power - Max: 41W Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220AB Full-Pak    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Current - Continuous Drain (Id) @ 25° C: 12A
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 2V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Input Capacitance (Ciss) @ Vds: 800pF @ 25V
Rds On (Max) @ Id, Vgs: 100 mOhm @ 9A, 10V
Package / Case: TO-220-3 Full Pack
Manufacturer: International Rectifier
Gate Charge (Qg) @ Vgs: 34nC @ 5V
Power - Max: 41W
Supplier Device Package: TO-220AB Full-Pak


Specifications

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 12 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 8.6
IDM Pulsed Drain Current 60
PD @TC = 25°C C Power Dissipation 4.1 W
Linear Derating Factor 0.27 W/°C
VGS Gate-to-Source Voltage ±16 V
EAS Single Pulse Avalanche Energy 150 mJ
IAR Avalanche Current 9.0 A
EAR Repetitive Avalanche Energy 4.1 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175 °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)



Description

Fifth Generation HEXFETs from International Rectifier IRLI530N utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit, com bined with the fast switching speed and ruggedized device IRLI530N design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.




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