FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 2V @ 250µA
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 20nC @ 5V
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 30W
Package / Case: TO-220-3 Full Pack
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 440pF @ 25V
Supplier Device Package: TO-220AB Full-Pak
Current - Continuous Drain (Id) @ 25° C: 8.1A
Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V
Specifications
|
Parameter |
Max. |
Units |
| ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
8.1 |
A |
| ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
5.7 |
|
| IDM |
Pulsed Drain Current |
35 |
|
| PD @TC = 25°C |
Power Dissipation |
30 |
W |
|
Linear Derating Factor |
0.20 |
W/°C |
| VGS |
Gate-to-Source Voltage |
±16 |
V |
| EAS |
Single Pulse Avalanche Energy |
85 |
mJ |
| IAR |
Avalanche Current |
6.0 |
A |
| EAR |
Repetitive Avalanche Energy |
3.0 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
TJ
TSTG |
Operating Junction and
Storage Temperature Range |
-55 to + 175 |
°C |
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
|
| |
Mounting torque, 6-32 or M3 screw |
10 lbf•in (1.1N•m) |
|
DescriptionFifth Generation HEXFETs from International Rectifier IRLI520N utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLI520N design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
IRLI520N Data Sheet
