IRLI520G

MOSFET N-Chan 100V 7.2 Amp

product image

IRLI520G Picture
SeekIC No. : 00158602 Detail

IRLI520G: MOSFET N-Chan 100V 7.2 Amp

floor Price/Ceiling Price

US $ 1.15~1.25 / Piece | Get Latest Price
Part Number:
IRLI520G
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~715
  • 715~1000
  • Unit Price
  • $1.25
  • $1.15
  • Processing time
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/3/12

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 10 V Continuous Drain Current : 7.2 A
Resistance Drain-Source RDS (on) : 0.27 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Full-Pak Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 10 V
Resistance Drain-Source RDS (on) : 0.27 Ohms
Continuous Drain Current : 7.2 A
Package / Case : TO-220 Full-Pak


Features:

• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• Logic-Level Gate Drive
• RDS (on) Specified at VGS = 4 V and 5 V
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available



Specifications

PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
100
V
Gate-Source Voltage
VGS
± 10
Continuous Drain Current
VGS at 5 V
TC = 25
ID
7.2
A
TC = 100
5.1
Pulsed Drain Currenta
IDM
29
Linear Derating Factor
0.24
W/
Single Pulse Avalanche Energyb
EAS
170
mJ
Repetitive Avalanche Currenta
IAR
7.2
A
Repetitive Avalanche Energya
EAR
3.7
mJ
Maximum Power Dissipation
TC = 25
PD
37
W
Peak Diode Recovery dV/dtc
dV/dt
5.5
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
Soldering Recommendations (Peak Temperature)
for 10 s
300d
Mounting Torque
6-32 or M3 screw
10
lbf ` in
1.1
N ` m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 , L = 4.9 mH, RG = 25 , IAS = 7.2 A (see fig. 12).
c. ISD 9.2 A, dI/dt 110 A/s, VDD VDS, TJ 175 .
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply



Description

Third generation Power MOSFETs from Vishay IRLI520G provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and ost-effectiveness.

The TO-220 FULLPAK IRLI520G eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Audio Products
Optical Inspection Equipment
Prototyping Products
DE1
Test Equipment
Inductors, Coils, Chokes
View more