Configuration
:
Maximum Operating Temperature
:
Transistor Polarity
: N-Channel
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-220FP
Gate-Source Breakdown Voltage
: 16 V
Drain-Source Breakdown Voltage
: 55 V
Continuous Drain Current
: 47 A
Resistance Drain-Source RDS (on)
: 18 mOhms
DescriptionThe IRLI3705NPbF is designed as the third generation HEXFET from international rectifier utilize advanced [rocessing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The IRLI3705NPbF has six features. (1)Logic level gate drive. (2)Advanced process technology. (3)Isolated package. (4)High voltage isolation is 2.5KVrms. (5)Its sink to lead creepage dist is 4.8mm. (6)Fully avalanche rated. That are all the main features.
Some absolute maximum ratings of IRLI3705NPbF have been concluded into several points as follow. (1)Its continuous drain current at 10V would be 52A at 25°C and would be 37A at 100°C. (2)Its pulsed drain current would be 310A. (3)Its power dissipation would be 58W at 25°C. (4)Its linear derating factor would be 0.39W/°C. (5)Its gate to source voltage would be +/-16V. (6)Its repetitive avalanche energy would be 5.8mJ. (7)Its peak diode recovery dv/dt would be 5.0V/ns. (8)Its operating junction and storage temperature range would be from -55°C to +175°C. (9)Its soldering temperature for 10 seconds would be 300°C 1.6mm from case. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some electrical characteristics of IRLI3705NPbF are concluded as follow. (1)Its drain to source breakdown voltage would be min 55V. (2)Its breakdown voltage temperature coefficient would be typ 0.056V/°C. (3)Its static drain to source on-resistance would be max 0.010 ohms at Vgs=10V, Id=28A and would be max 0.012 ohms at Vgs=5.0V, Id=28A and would be max 0.018 ohms with condition of Vgs=4.0V, Id=24A. (4)Its gate threshold voltage would be min 1.0V and max 2.0V. And so on. If you have any question or suggestion or want to know more information please contact us for IRLI3705NPbF details. Thank you!
Parameters: | Technical/Catalog Information | IRLI3705NPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 52A |
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 28A, 10V |
| Input Capacitance (Ciss) @ Vds | 3600pF @ 25V |
| Power - Max | 58W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 98nC @ 5V |
| Package / Case | TO-220-3 Fullpak (Straight Leads) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRLI3705NPBF
IRLI3705NPBF
|
IRLI3705NPBF Data Sheet
