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IRLI3103

Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 38 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 27 A IDM Pulsed Drain Current 220 A PD @TC = 25°C Power Dissipation 38 W Li...

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IRLI3103: Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 38 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 27 A IDM P...

IRLI3103 Data Sheet

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Part Number:
IRLI3103
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 38 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 27 A
IDM Pulsed Drain Current 220 A
PD @TC = 25°C Power Dissipation 38 W
  Linear Derating Factor 0.25 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 240 mJ
IAR Avalanche Current 34 A
EAR Repetitive Avalanche Energy 3.8 mJ
dv/dt Peak Diode Recovery dv/dt 2.0 V/ns
TJ,TSTG Operating Junction
Storage Temperature Range		 -55 to 175
  Soldering Temperature, for 10 seconds 300(1.6mm from case)
  Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)  



Description

Fifth Generation HEXFETs from International Rectifier IRLI3103 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized IRLI3103 device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.




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