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IRHYS67230CM

Features: ·Low RDS(on) ·Fast Switching ·Single Event Effect (SEE) Hardened ·Low Total Gate Charge ·Simple Drive Requirements ·Ease of Paralleling ·Hermetically Sealed ·Ceramic Eyelets ·Electrically Isolated ·Light WeightSpecifications Parameter Units ID @ VGS=-12V,TC=25 Con...

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SeekIC No. : 004378160 Detail

IRHYS67230CM: Features: ·Low RDS(on) ·Fast Switching ·Single Event Effect (SEE) Hardened ·Low Total Gate Charge ·Simple Drive Requirements ·Ease of Paralleling ·Hermetically Sealed ·Ceramic Eyelets ·Electrically ...

IRHYS67230CM Data Sheet

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Part Number:
IRHYS67230CM
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/13

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Product Details

Description



Features:

·Low RDS(on)   
·Fast Switching   
·Single Event Effect (SEE) Hardened 
·Low Total Gate Charge 
·Simple Drive Requirements 
·Ease of Paralleling 
·Hermetically Sealed 
·Ceramic Eyelets 
·Electrically Isolated 
·Light Weight


Specifications
Parameter
Units
ID @ VGS=-12V,TC=25
 Continuous Drain Curren
16
A
ID @ VGS=-12V,TC=100
 Continuous Drain Curren
10
IDM
 Pulsed Drain Current
64
PD@ TC= 25
 Power Dissipatio
75
W
 Linear Derating Factor
0.6
W/
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy
83
mJ
IAR
 Avalanche Current
16
A
EAR
 Repetitive Avalanche Energy
7.5
mJ
dv/dt
 Peak Diode Recovery dv/dt
9.0
V/nS
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to 150
Soldering Temperature, for 10 seconds
300 (0.063 in.(1.6 mm from case for 10s))
 Mounting torqe, 6-32 or M3 screw
4.3(Typical)
g



Description

International Rectifier's R6TM  technology provides superior power MOSFETs IRHYS67230CM for space applications.These devices IRHYS67230CM have improved immunity to Single Event Effect (SEE) and have been characterized for useful  performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on)  and faster switching times reduces power loss and increases power density in today"high speed switching applications  such as  DC-DC converters and motor controllers. These devices IRHYS67230CM retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.




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