Features: ·Low RDS(on) ·Fast Switching ·Single Event Effect (SEE) Hardened ·Low Total Gate Charge ·Simple Drive Requirements ·Ease of Paralleling ·Hermetically Sealed ·Ceramic Eyelets ·Electrically Isolated ·Light WeightSpecifications Parameter Units ID @ VGS=-12V,TC=25 Con...
IRHYS67230CM: Features: ·Low RDS(on) ·Fast Switching ·Single Event Effect (SEE) Hardened ·Low Total Gate Charge ·Simple Drive Requirements ·Ease of Paralleling ·Hermetically Sealed ·Ceramic Eyelets ·Electrically ...
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Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton T...
Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton T...
Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton T...
Parameter |
Units | ||
ID @ VGS=-12V,TC=25 |
Continuous Drain Curren |
16 |
A |
ID @ VGS=-12V,TC=100 |
Continuous Drain Curren |
10 | |
IDM |
Pulsed Drain Current |
64 | |
PD@ TC= 25 |
Power Dissipatio |
75 |
W |
Linear Derating Factor |
0.6 |
W/ | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
83 |
mJ |
IAR |
Avalanche Current |
16 |
A |
EAR |
Repetitive Avalanche Energy |
7.5 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
9.0 |
V/nS |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
|
Soldering Temperature, for 10 seconds |
300 (0.063 in.(1.6 mm from case for 10s)) | ||
Mounting torqe, 6-32 or M3 screw |
4.3(Typical) |
g |
International Rectifier's R6TM technology provides superior power MOSFETs IRHYS67230CM for space applications.These devices IRHYS67230CM have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today"high speed switching applications such as DC-DC converters and motor controllers. These devices IRHYS67230CM retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.