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IRHY57133CMSE

Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = -12V, TC = 25°C Continuous Drain Curr...

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SeekIC No. : 004378137 Detail

IRHY57133CMSE: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Light...

IRHY57133CMSE Data Sheet

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Part Number:
IRHY57133CMSE
Supply Ability:
5000

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  • 1~5000
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  • Processing time
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Ultra Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Package
· Light Weight


Specifications

  Parameter   Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current 18* A
ID @ VGS = -12V, TC = 100°C Continuous Drain Current 12 A
IDM Pulsed Drain Current 72 A
PD @ TC = 25°C Max. Power Dissipation 75 W
  Linear Derating Factor 0.6 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 80 mJ
IAR Avalanche Current 18 A
EAR Repetitive Avalanche Energy 7.5 mJ
dv/dt Peak Diode Recovery dv/dt 8.0 V/ns
TJ,TSTG Operating Junction
Storage Temperature Range		 -55 to 150 oC
  Lead Temperature 300 ( 0.063 in. (1.6mm) from case for 10s) oC
  Weight 4.3 (typical) g



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