Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = -12V, TC = 25°C Continuous Drain Curr...
IRHY57034CM: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Light...
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Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton T...
Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton T...
Features: Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive...
Parameter | Units | ||
ID @ VGS = -12V, TC = 25°C | Continuous Drain Current | 18* | A |
ID @ VGS = -12V, TC = 100°C | Continuous Drain Current | 18* | A |
IDM | Pulsed Drain Current | 72 | A |
PD @ TC = 25°C | Max. Power Dissipation | 75 | W |
Linear Derating Factor | 0.6 | W/°C | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 110 | mJ |
IAR | Avalanche Current | 18 | A |
EAR | Repetitive Avalanche Energy | 7.5 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 10 | V/ns |
TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to 150 | oC |
Lead Temperature | 300 ( 0.063 in. (1.6mm) from case for 10s) | oC | |
Weight | 4.3 (typical) | g |