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IRHYK57133CMSE

Features: ·Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Electrically Isolated· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25 ...

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SeekIC No. : 004378155 Detail

IRHYK57133CMSE: Features: ·Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Electrically ...

IRHYK57133CMSE Data Sheet

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Part Number:
IRHYK57133CMSE
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

· Low RDS(on)
· Fast Switching
· Single Event Effect (SEE) Hardened
· Low Total Gate Charge
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Eyelets
· Electrically Isolated
· Light Weight


Specifications
Parameter
Units
ID @ VGS = 12V, TC = 25
 Continuous Drain Current
20
A
ID @ VGS = 12V, TC = 100
 Continuous Drain Current
12.5
IDM
 Pulsed Drain Current
80
PD @ TC = 25
 Max.Power Dissipation
75
W
 Linear Derating Factor
0.6
W/
VGS
 Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
73
mJ
IAR
 Avalanche Current
20
A
EAR
 Repetitive Avalanche Energy
7.5
mJ
dv/dt
 Peak Diode Recovery dv/dt
11.3
V/ns
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to 150
Pack. Mounting Surface Temp.
300 (for 5s)
Weight
3.7 (Typical)
g
for footnotes refer to the last page





Description

International Rectifier's R5TM technology IRHYK57133CMSE provides high performance power MOSFETs for space applications. These devices IRHYK57133CMSE have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHYK57133CMSE retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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