IRHYS67134CM

Features: ·Low RDS(on)·Fast Switching·Single Event Effect (SEE) Hardened·Low Total Gate Charge·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Ceramic Eyelets·Electrically Isolated·Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25 Continu...

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SeekIC No. : 004378159 Detail

IRHYS67134CM: Features: ·Low RDS(on)·Fast Switching·Single Event Effect (SEE) Hardened·Low Total Gate Charge·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Ceramic Eyelets·Electrically Isolated...

floor Price/Ceiling Price

Part Number:
IRHYS67134CM
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/21

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Product Details

Description



Features:

·Low RDS(on)
·Fast Switching
·Single Event Effect (SEE) Hardened
·Low Total Gate Charge
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Ceramic Eyelets
·Electrically Isolated
·Light Weight



Specifications

Parameter
Units
ID @ VGS = 12V, TC = 25
Continuous Drain Current
19
A
ID @ VGS = 12V, TC = 100
Continuous Drain Current
12
IDM
Pulsed Drain Current
76
PD @TA = 25
Max. Power Dissipation
75
W
Linear Derating Factor
0.6
W
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
67
mJ
IAR
Avalanche Current
19
A
EAR
Repetitive Avalanche Energy
7.5
mJ
dv/dt
Peak Diode Recovery dv/dt
7.8
V/ns
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
Lead Temperature
300 (0.063 in. /1.6 mm from case for 10s)
Weight
4.3 (Typical)
g



Description

International Rectifier's R6TM technology provides superior power MOSFETs IRHYS67134CM for space applications. These devices IRHYS67134CM have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today's high speed switching applications such as DC-DC converters and motor controllers. These devices IRHYS67134CM retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.




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