IRHYS597034CM

Features: · Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Electrically Isolated· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25 Continuo...

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SeekIC No. : 004378156 Detail

IRHYS597034CM: Features: · Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Electrically...

floor Price/Ceiling Price

Part Number:
IRHYS597034CM
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/12/21

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Product Details

Description



Features:

· Low RDS(on)
· Fast Switching
· Single Event Effect (SEE) Hardened
· Low Total Gate Charge
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Eyelets
· Electrically Isolated
· Light Weight



Specifications

  Parameter   Units
ID @ VGS = 12V, TC = 25 Continuous Drain Current
-20
A
ID @ VGS = 12V, TC = 100 Continuous Drain Current
-13
IDM Pulsed Drain Current
-80
PD @ TC = 25 Max. Power Dissipation
75
W
  Linear Derating Factor
0.6
W/
VGS Gate-to-Source Voltage
±20
V
EAS Single Pulse Avalanche Energy
134
mJ
IAR Avalanche Current
-20
A
EAR Repetitive Avalanche Energy
7.5
mJ
dv/dt Peak Diode Recovery dv/dt
-4.9
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 150
  Lead Temperature
300 (0.063 in.(1.6 mm from case for 10s)
  Weight
4.3 (Typical )
g



Description

International Rectifier's R5TM technology IRHYS597034CM provides high performance power MOSFETs for space applications. These devices IRHYS597034CM have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHYS597034CM retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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