Features: · Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Ceramic Eyelets·Electrically Isolated·Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25 Continuous Dr...
IRHYB67230CM: Features: · Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Ceramic Eyelets·Electrically Iso...
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Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton T...
Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton T...
Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton T...
Parameter | Units | ||
ID @ VGS = 12V, TC = 25 | Continuous Drain Current | 16 | A |
ID @ VGS = 12V, TC = 100 | Continuous Drain Current | 10 | |
IDM | Pulsed Drain Current | 64 | |
PD @ TC = 25 | Max. Power Dissipation | 75 | W |
Linear Derating Factor | 0.6 | W/ | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 83 | mJ |
IAR | Avalanche Current | 16 | A |
EAR | Repetitive Avalanche Energy | 7.5 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 9.0 | V/ns |
TJ,TSTG | Operating JunctionStorage Temperature Range | -55 to 150 | |
Lead Temperature | 300 (0.063 in. /1.6 mm from case for 10s) | ||
Weight | 3.7 (Typical) | g |