IRHYB67130CM

Features: ··Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Electrically Isolated· Light WeightSpecifications Parameter Units ID @ VGS = -12V, TC = 25°C Conti...

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SeekIC No. : 004378153 Detail

IRHYB67130CM: Features: ··Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Electrically...

floor Price/Ceiling Price

Part Number:
IRHYB67130CM
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/2/15

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Product Details

Description



Features:

··Low RDS(on)
· Fast Switching
· Single Event Effect (SEE) Hardened
· Low Total Gate Charge
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Eyelets
· Electrically Isolated
· Light Weight



Specifications

  Parameter   Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current 20* A
ID @ VGS = -12V, TC = 100°C Continuous Drain Current 19
IDM Pulsed Drain Current 80
PD @ TC = 25°C Max. Power Dissipation 75 W
  Linear Derating Factor 0.6 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 107 mJ
IAR Avalanche Current 20 A
EAR Repetitive Avalanche Energy 7.5 mJ
dv/dt Peak Diode Recovery dv/dt 5.5 V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 150
  Lead Temperature 300 (0.063in./1.6mm from case for 10s)
  Weight 3.7 (Typical) g



Description

International Rectifier's R6TM technology IRHYB67130CM provides superior power MOSFETs for space applications. These devices IRHYB67130CM have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today's high speed switching applications such as DC-DC converters and motor controllers. These devices IRHYB67130CM retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.




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