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IRHYB597034CM

Features: · Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Electrically Isolated· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25...

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SeekIC No. : 004378152 Detail

IRHYB597034CM: Features: · Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Electrically...

IRHYB597034CM Data Sheet

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Part Number:
IRHYB597034CM
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

· Low RDS(on)
· Fast Switching
· Single Event Effect (SEE) Hardened
· Low Total Gate Charge
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Eyelets
· Electrically Isolated
· Light Weight


Specifications
Parameter
Units
ID @ VGS = 12V, TC = 25
Continuous Drain Current
-20
A
ID @ VGS = 12V, TC =100
Continuous Drain Current
-13
IDM
Pulsed Drain Current
-80
PD @ TC = 25
Max. Power Dissipation
75
W
Linear Derating actor
0.6
W/
VGS
Gate-to-Source Voltage
20
V
EAS
Single Pulse Avalanche Energy
134
mJ
IAR
Avalanche Current
-20
A
EAR
Repetitive Avalanche Energy
7.5
mJ
dV/dt
Peak Diode Recovery dv/dt
4.9
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
 Lead Temperature
300 (0.063in./1.6mm rom case or 10sec)
Weight

3.7 ( Typical )
g



Description

International Rectifier's R5TM technology IRHYB597034CM provides high performance power MOSFETs for space applications. These devices IRHYB597034CM have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHYB597034CM retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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