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IRHY9130CM

Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Light WeightSpecifications Parameter Units ID @ VGS = -12V, TC = 25°C Continuous Drain Current -11 ...

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SeekIC No. : 004378150 Detail

IRHY9130CM: Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Light WeightSpecifications ...

IRHY9130CM Data Sheet

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Part Number:
IRHY9130CM
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/2/15

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Light Weight


Specifications
Parameter
Units
ID @ VGS = -12V, TC = 25°C
Continuous Drain Current
-11
A
ID @ VGS = -12V, TC = 100°C
Continuous Drain Current
-7.0
IDM
Pulsed Drain Current
-44
PD @ TC = 25°C
Max. Power Dissipation
75
W
Linear Derating Factor
0.6
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
150
mJ
IAR
Avalanche Current
-11
A
EAR
Repetitive Avalanche Energy
7.5
mJ
dv/dt
Repetitive Avalanche Energy
-16
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 150
oC
Lead Temperature
300 (0.063 in (1.6mm)from case for 10s)
Weight
4.3 (Typical)
g



Description

International Rectifier's RADHard HEXFET® technology IRHY9130CM provides high performance power MOSFETs for space applications. This IRHY9130CM  has over a decade of proven performance and reliability in satellite applications. These devices IRHY9130CM  have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHY9130CM retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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