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IRHY7G30CMSE

Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = -12V, TC = 25°C Continuous D...

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IRHY7G30CMSE: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Light...

IRHY7G30CMSE Data Sheet

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Part Number:
IRHY7G30CMSE
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Ultra Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Package
· Light Weight


Specifications

  Parameter   Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current 1.2 A
ID @ VGS = -12V, TC = 100°C Continuous Drain Current 0.76 A
IDM Pulsed Drain Current 4.8 A
PD @ TC = 25°C Max. Power Dissipation 50 W
  Linear Derating Factor 0.4 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 84 mJ
IAR Avalanche Current 1.2 A
EAR Repetitive Avalanche Energy 5.0 mJ
dv/dt Peak Diode Recovery dv/dt 3.0 V/ns
TJ,TSTG Operating Junction
Storage Temperature Range		 -55 to 150 oC
  Lead Temperature 300 ( 0.063 in. (1.6mm) from case for 10s) oC
  Weight 4.3(typical) g



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