Features: ·Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Electrically Isolated· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25ID @ VGS ...
IRHY67C30CM: Features: ·Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Electrically ...
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Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton T...
Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton T...
Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton T...
Parameter | Units | ||
ID @ VGS = 12V, TC = 25 ID @ VGS = 12V, TC = 100 IDM |
Continuous Drain Current Continuous Drain Current Pulsed Drain Current |
3.4 2.1 13.6 |
A |
PD @ TC = 25 | Max. Power Dissipation |
75 |
W |
Linear Derating Factor |
0.6 |
W/ | |
VGS EAS IAR EAR dv/dt |
Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt |
±20 97 3.4 7.5 8.1 |
V mJ A mJ V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
|
Lead Temperature Weight |
300 (0.063 in. /1.6 mm from case for 10s) 4.3 (Typical) |
g |
International Rectifier's R6TM technology provides superior power MOSFETs IRHY67C30CM for space applications. These devices IRHY67C30CM have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2).
Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today's high speed switching applications such as DC-DC converters and motor controllers. These devices IRHY67C30CM retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.