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IRHY593230CM

Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed·Ceramic Package· Light WeightSpecifications Parameter Unit ID @ VGS = -12V, TC = 25 Continuous Drain ...

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SeekIC No. : 004378142 Detail

IRHY593230CM: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed·Ceramic Package· Light ...

IRHY593230CM Data Sheet

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Part Number:
IRHY593230CM
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Ultra Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Package
· Light Weight


Specifications

 
Parameter
Unit
ID @ VGS = -12V, TC = 25
 Continuous Drain Current
-8.0
A
ID @ VGS = -12V, TC = 100
 Continuous Drain Current
-5.0
IDM
 Pulsed Drain Current
-32
PD @ TC = 25
 Max. Power Dissipation
75
W
 Linear Derating Factor
0.6
W/
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy
80
mJ
IAR
 Avalanche Current
-8.0
A
EAR
 Repetitive Avalanche Energy
7.5
mJ
dv/dt
 Peak Diode Recovery dv/dt
-12
V/ns
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to 150
Lead Temperature
300 (0.063in/1.6mm from case for 10s)
 Weight
4.3 ( Typical )
g



Description

International Rectifier's R5TM technology IRHY593230CM provides high performance power MOSFETs for space applications. These devices IRHY593230CM have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHY593230CM retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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