IRHSNA57Z60

Features: · Co-Pack N-channel RAD-Hard MOSFET and Schottky Diode· Ideal for Synchronous Rectifiers in DC-DC Converters up to 75A Output· Low Conduction Losses· Low Switching Losses· Low Vf Schottky Rectifier· Refer to IRHSLNA57Z60 for Lower InductanceSpecifications Parameter Units ...

product image

IRHSNA57Z60 Picture
SeekIC No. : 004378134 Detail

IRHSNA57Z60: Features: · Co-Pack N-channel RAD-Hard MOSFET and Schottky Diode· Ideal for Synchronous Rectifiers in DC-DC Converters up to 75A Output· Low Conduction Losses· Low Switching Losses· Low Vf Schottky ...

floor Price/Ceiling Price

Part Number:
IRHSNA57Z60
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/31

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· Co-Pack N-channel RAD-Hard MOSFET and Schottky Diode
· Ideal for Synchronous Rectifiers in DC-DC Converters up to 75A Output
· Low Conduction Losses
· Low Switching Losses
· Low Vf Schottky Rectifier
· Refer to IRHSLNA57Z60 for Lower Inductance



Specifications

  Parameter   Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current 75* A
ID @ VGS = -12V, TC = 100°C Continuous Drain Current 75* A
IDM Pulsed Drain Current 300 A
PD @ TC = 25°C Max. Power Dissipation 250 W
  Linear Derating Factor 2.0 W/°C
VGS Gate-to-Source Voltage ±20 V
VDS Drain-to-Source Voltage 30 mJ
IF(AV)@VGS =12V, TC =25°C Schottky and Body Diode Avg. Forward Current 75* A
IF(AV)@VGS =12V, TC =100°C Schottky and Body Diode Avg. Forward Current 75* mJ
TJ,TSTG Operating Junction
Storage Temperature Range
-55 to 150
  Lead Temperature 300 (for 10sec)
  Weight 3.3 (typical) g



Description

The SynchFet family of Co-Pack RAD-Hard MOSFETs and Schottky diodes IRHSNA57Z60 offers the designer an innovative, board space saving solution for switching regulator and power management applications. RAD-Hard MOSFETs IRHSNA57Z60 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of Military and Space applications




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Inductors, Coils, Chokes
Circuit Protection
LED Products
Cables, Wires
Fans, Thermal Management
Batteries, Chargers, Holders
View more