Features: · Co-Pack N-channel RAD-Hard MOSFET and Schottky Diode· Ideal for Synchronous Rectifiers in DC-DC Converters up to 75A Output· Low Conduction Losses· Low Switching Losses· Low Vf Schottky Rectifier· Refer to IRHSNA57064 for Lower RDS(on)Specifications Parameter Units ID @ VG...
IRHSLNA57064: Features: · Co-Pack N-channel RAD-Hard MOSFET and Schottky Diode· Ideal for Synchronous Rectifiers in DC-DC Converters up to 75A Output· Low Conduction Losses· Low Switching Losses· Low Vf Schottky ...
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Features: · Co-Pack N-channel RAD-Hard MOSFET and Schottky Diode· Ideal for Synchronous Rectifiers...
Features: ·Co-Pack N-channel RAD-Hard MOSFET and Schottky Diode·Ideal for Synchronous Rectifiers i...
Features: · Co-Pack N-channel RAD-Hard MOSFET and Schottky Diode· Ideal for Synchronous Rectifiers...
Parameter | Units | ||
ID @ VGS = -12V, TC = 25°C | Continuous Drain Current | 75* | A |
ID @ VGS = -12V, TC = 100°C | Continuous Drain Current | 75* | A |
IDM | Pulsed Drain Current | 300 | A |
PD @ TC = 25°C | Max. Power Dissipation | 250 | W |
Linear Derating Factor | 2.0 | W/°C | |
VGS | Gate-to-Source Voltage | ±20 | V |
VDS | Drain-to-Source Voltage | 60 | mJ |
IF(AV)@VGS =12V, TC =25°C | Schottky and Body Diode Avg. Forward Current | 75* | A |
IF(AV)@VGS =12V, TC =100°C | Schottky and Body Diode Avg. Forward Current | 75* | mJ |
TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to 150 | |
Lead Temperature | 300 (for 10sec) | ||
Weight | 3.3 (typical) | g |
The SynchFet family of Co-Pack RAD-Hard MOSFETs and Schottky diodes IRHSLNA57064 offers the designer an innovative, board space saving solution for switching regulator and power management applications. RAD-Hard MOSFETs IRHSLNA57064 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of Military and Space applications.