IRHSNA57064

Features: ·Co-Pack N-channel RAD-Hard MOSFET and Schottky Diode·Ideal for Synchronous Rectifiers in DC-DC Converters up to 75A Output· Low Conduction Losses· Low Switching Losses· Low Vf Schottky Rectifier· Refer to IRHSLNA57064 for Lower InductanceSpecifications Parameter Units ...

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SeekIC No. : 004378133 Detail

IRHSNA57064: Features: ·Co-Pack N-channel RAD-Hard MOSFET and Schottky Diode·Ideal for Synchronous Rectifiers in DC-DC Converters up to 75A Output· Low Conduction Losses· Low Switching Losses· Low Vf Schottky Re...

floor Price/Ceiling Price

Part Number:
IRHSNA57064
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Description



Features:

·Co-Pack N-channel RAD-Hard MOSFET and Schottky Diode
·Ideal for Synchronous Rectifiers in DC-DC Converters up to 75A Output
· Low Conduction Losses
· Low Switching Losses
· Low Vf Schottky Rectifier
· Refer to IRHSLNA57064 for Lower Inductance



Specifications

Parameter
Units
ID @ VGS = -12V, TC = 25°C
Continuous Drain or Source Current
75*
A
ID @ VGS = -12V, TC = 100°C
Continuous Drain or Source Current
75*
IDM
Pulsed Drain Current ➀
300
PD @ TC = 25°C
Max. Power Dissipation
250
W
Linear Derating Factor
2.0
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy ➃
370
mJ
IAR
Avalanche Current ➀
75
A
EAR
Repetitive Avalanche Energy ➀
25
mJ
IF (AV)@ TC = 25°C
Schottky and Body Diode Avg. Forward Current ➂
75*
A
IF (AV)@ TC =100°C
Schottky and Body Diode Avg. Forward Current ➂
75*
TJ, TSTG
Opeating and Storage Temperature Range
-55 to 150
°C
Pckg. Mounting Surface Temp.
300 (for 5s)
Weight
3.3 (Typical)
g



Description

The SynchFet family of Co-Pack RAD-Hard MOSFETs and Schottky diodes IRHSNA57064 offers the designer an innovative, board space saving solution for switching regulator and power management applications. RAD-Hard MOSFETs IRHSNA57064 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of Military and Space applications.




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