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IRHQ57110

Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Surface Mount· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Dr...

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SeekIC No. : 004378124 Detail

IRHQ57110: Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Surface Mou...

IRHQ57110 Data Sheet

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Part Number:
IRHQ57110
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Package
· Surface Mount
· Light Weight


Specifications

  Parameter   Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 4.6 A
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 2.9 A
IDM Pulsed Drain Current 18.4 A
PD @ TC = 25°C Max. Power Dissipation 12 W
  Linear Derating Factor 0.1 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 47 mJ
IAR Avalanche Current 4.6 A
EAR Repetitive Avalanche Energy 1.2 mJ
dv/dt Peak Diode Recovery dv/dt 6.1 V/ns
TJ Operating Junction -55 to 150 oC
TSTG Storage Temperature Range   oC
  Pckg. Mounting Surface Temp. 300 (for 5s) oC
  Weight 0.89(Typical) g



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