Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Surface Mount· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Dr...
IRHQ57110: Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Surface Mou...
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Features: ·Single Event Effect (SEE) Hardened·Low RDS(on)·Low Total Gate Charge·Proton Tolerant·Si...
Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Toleran...
Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Toleran...
Parameter | Units | ||
ID @ VGS = 12V, TC = 25°C | Continuous Drain Current | 4.6 | A |
ID @ VGS = 12V, TC = 100°C | Continuous Drain Current | 2.9 | A |
IDM | Pulsed Drain Current | 18.4 | A |
PD @ TC = 25°C | Max. Power Dissipation | 12 | W |
Linear Derating Factor | 0.1 | W/°C | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 47 | mJ |
IAR | Avalanche Current | 4.6 | A |
EAR | Repetitive Avalanche Energy | 1.2 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 6.1 | V/ns |
TJ | Operating Junction | -55 to 150 | oC |
TSTG | Storage Temperature Range | oC | |
Pckg. Mounting Surface Temp. | 300 (for 5s) | oC | |
Weight | 0.89(Typical) | g |