Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Surface Mount·Light WeightSpecifications Parameter Units ID @ VGS = -12V, TC = 25°C C...
IRHQ57214SE: Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Surface Mou...
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Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Toleran...
Parameter | Units | ||
ID @ VGS = -12V, TC = 25°C | Continuous Drain Current | 1.9 | A |
ID @ VGS = -12V, TC = 100°C | Continuous Drain Current | 1.2 | A |
IDM | Pulsed Drain Current ➀ | 7.6 | A |
PD @ TC = 25°C | Max. Power Dissipation | 12 | W |
Linear Derating Factor | 0.1 | W/°C | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy ➁ | 30 | mJ |
IAR | Avalanche Current ➀ | 1.9 | A |
EAR | Repetitive Avalanche Energy ➀ | 1.2 | mJ |
dv/dt | Peak Diode Recovery dv/dt ➂ | 9.9 | V/ns |
TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to 150 | |
Lead Temperature | 300 (for 5s) | ||
Weight | 0.89(Typical ) | g |