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IRHQ567110

Features: ·Single Event Effect (SEE) Hardened·Low RDS(on)·Low Total Gate Charge·Proton Tolerant·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Ceramic Package·Surface Mount· Light WeightSpecifications Parameter Units ID @ VGS = -12V, TC = 25°C Continuou...

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IRHQ567110: Features: ·Single Event Effect (SEE) Hardened·Low RDS(on)·Low Total Gate Charge·Proton Tolerant·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Ceramic Package·Surface Mount· Light...

IRHQ567110 Data Sheet

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Part Number:
IRHQ567110
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

·Single Event Effect (SEE) Hardened
·Low RDS(on)
·Low Total Gate Charge
·Proton Tolerant
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Ceramic Package
·Surface Mount
· Light Weight


Specifications

  Parameter   Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current -2.8 A
ID @ VGS = -12V, TC = 100°C Continuous Drain Current -1.8 A
IDM Pulsed Drain Current ➀ -11.2 A
PD @ TC = 25°C Max. Power Dissipation 12 W
  Linear Derating Factor 0.1 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ➁ 70 mJ
IAR Avalanche Current ➀ -2.8 A
EAR Repetitive Avalanche Energy ➀ 1.2 mJ
dv/dt Peak Diode Recovery dv/dt ➂ 7.1 V/ns
TJ,TSTG Operating Junction
Storage Temperature Range		 -55 to 150
  Lead Temperature 300 (for 5s)
  Weight 0.89(Typical ) g



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