IRHNJ7430SE

Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = -12V, TC = 2...

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SeekIC No. : 004378120 Detail

IRHNJ7430SE: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic...

floor Price/Ceiling Price

Part Number:
IRHNJ7430SE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/10/30

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Ultra Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Ceramic Package
· Light Weight



Specifications

  Parameter   Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current 4.5 A
ID @ VGS = -12V, TC = 100°C Continuous Drain Current 2.8 A
IDM Pulsed Drain Current ➀ 18 A
PD @ TC = 25°C Max. Power Dissipation 75 W
  Linear Derating Factor 0.6 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ➁ 150 mJ
IAR Avalanche Current ➀ 4.5 A
EAR Repetitive Avalanche Energy ➀ 7.5 mJ
dv/dt Peak Diode Recovery dv/dt ➂ 2.5 V/ns
TJ,TSTG Operating Junction
Storage Temperature Range
-55 to 150
  Lead Temperature 300 (for 5s)
  Weight 1.0(Typical ) g



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