Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = -12V, TC = 25...
IRHN57250SE: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic...
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Features: · Radiation Hardened up to 1 x 105 Rads (Si)· Single Event Burnout (SEB) Hardened· Singl...
Parameter | Units | ||
ID @ VGS = -12V, TC = 25°C | Continuous Drain Current | 31 | A |
ID @ VGS = -12V, TC = 100°C | Continuous Drain Current | 19 | A |
IDM | Pulsed Drain Current ➀ | 124 | A |
PD @ TC = 25°C | Max. Power Dissipation | 150 | W |
Linear Derating Factor | 1.2 | W/°C | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy ➁ | 300 | mJ |
IAR | Avalanche Current ➀ | 31 | A |
EAR | Repetitive Avalanche Energy ➀ | 15 | mJ |
dv/dt | Peak Diode Recovery dv/dt ➂ | 7.0 | V/ns |
TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to 150 | oC |
Lead Temperature | 300 ( 0.063 in. (1.6mm) from case for 10s) | oC | |
Weight | 9.3 (typical) | g |