IRHN7054

Features: ·Single Event Effect (SEE) Hardened ·Low RDS(on)·Low Total Gate Charge ·Simple Drive Requirements ·Ease of Paralleling ·Hermetically Sealed ·Ceramic Package ·Light Weight ·Surface MountSpecifications Parameter Units ID @ VGS=-12V,TC=25 CContinuous Drain Curren ...

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IRHN7054 Picture
SeekIC No. : 004378049 Detail

IRHN7054: Features: ·Single Event Effect (SEE) Hardened ·Low RDS(on)·Low Total Gate Charge ·Simple Drive Requirements ·Ease of Paralleling ·Hermetically Sealed ·Ceramic Package ·Light Weight ·Surface MountSpe...

floor Price/Ceiling Price

Part Number:
IRHN7054
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Description



Features:

·Single Event Effect (SEE) Hardened
·Low RDS(on)
·Low Total Gate Charge
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Ceramic  Package
·Light Weight
·Surface Mount



Specifications

Parameter
Units
ID @ VGS=-12V,TC=25
CContinuous Drain Curren
35
A
ID@ VGS=-12V,TC=100
CContinuous Drain Curren
30
IDM
Pulsed Drain Current
283
PD@ TC= 25
CMax. Power Dissipatio
150
W
Linear Derating Factor
1.2
W/
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
500
mJ
IAR
Avalanche Current
35
A
EAR
Repetitive Avalanche Energy
15
mJ
dv/dt
Peak Diode Recovery dv/dt
3.5
V/nS
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 150
Lead Temperature
300(5sec)
Weight
2.6 ( Typical )
g



Description

International Rectifier IRHN7054's RAD-HarTM HEXFET® technology provides high performance power MOSFETs for space applications.  This technology IRHN7054 has over a decade of proven performance and reliability in satellite applications.  These devices IRHN7054 have been characterized for both Total Dose and Single Event Effects (SEE).  The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.  These devices IRHN7054 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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