Features: ·Single Event Effect (SEE) Hardened ·Low RDS(on)·Low Total Gate Charge ·Simple Drive Requirements ·Ease of Paralleling ·Hermetically Sealed ·Ceramic Package ·Light Weight ·Surface MountSpecifications Parameter Units ID @ VGS=-12V,TC=25 CContinuous Drain Curren ...
IRHN7054: Features: ·Single Event Effect (SEE) Hardened ·Low RDS(on)·Low Total Gate Charge ·Simple Drive Requirements ·Ease of Paralleling ·Hermetically Sealed ·Ceramic Package ·Light Weight ·Surface MountSpe...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: · Radiation Hardened up to 1 x 105 Rads (Si)· Single Event Burnout (SEB) Hardened· Singl...
Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton T...
Parameter |
Units | ||
ID @ VGS=-12V,TC=25 |
CContinuous Drain Curren |
35 |
A |
ID@ VGS=-12V,TC=100 |
CContinuous Drain Curren |
30 | |
IDM |
Pulsed Drain Current |
283 | |
PD@ TC= 25 |
CMax. Power Dissipatio |
150 |
W |
Linear Derating Factor |
1.2 |
W/ | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
500 |
mJ |
IAR |
Avalanche Current |
35 |
A |
EAR |
Repetitive Avalanche Energy |
15 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
3.5 |
V/nS |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
|
Lead Temperature |
300(5sec) | ||
Weight |
2.6 ( Typical ) |
g |
International Rectifier IRHN7054's RAD-HarTM HEXFET® technology provides high performance power MOSFETs for space applications. This technology IRHN7054 has over a decade of proven performance and reliability in satellite applications. These devices IRHN7054 have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHN7054 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.