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IRHNJ7230

Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Surface Mount·Light WeightSpecifications Parameter Units ID @ VGS = -12V, TC = 25°C C...

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SeekIC No. : 004378118 Detail

IRHNJ7230: Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Surface Mou...

IRHNJ7230 Data Sheet

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Part Number:
IRHNJ7230
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Package
· Surface Mount
·Light Weight


Specifications

  Parameter   Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current 9.4 A
ID @ VGS = -12V, TC = 100°C Continuous Drain Current 6.0 A
IDM Pulsed Drain Current ➀ 37 A
PD @ TC = 25°C Max. Power Dissipation 75 W
  Linear Derating Factor 0.6 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ➁ 150 mJ
IAR Avalanche Current ➀ 5.5 A
EAR Repetitive Avalanche Energy ➀ 7.5 mJ
dv/dt Peak Diode Recovery dv/dt ➂ 16 V/ns
TJ,TSTG Operating Junction
Storage Temperature Range		 -55 to 150
  Lead Temperature 300 (for 5s)
  Weight 1.0(Typical ) g



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