Features: Low RDS(on)Fast SwitchingSingle Event Effect (SEE) HardenedLow Total Gate ChargeSimple Drive RequirementsEase of ParallelingHermetically SealedSurface MountCeramic PackageLight WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 3.4 A ...
IRHNJ67C30: Features: Low RDS(on)Fast SwitchingSingle Event Effect (SEE) HardenedLow Total Gate ChargeSimple Drive RequirementsEase of ParallelingHermetically SealedSurface MountCeramic PackageLight WeightSpeci...
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Features: · Radiation Hardened up to 1 x 105 Rads (Si)· Single Event Burnout (SEB) Hardened· Singl...
Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton T...
Parameter | Units | ||
ID @ VGS = 12V, TC = 25°C | Continuous Drain Current | 3.4 | A |
ID @ VGS = 12V, TC = 100°C | Continuous Drain Current | 22 | |
IDM | Pulsed Drain Current | 13.6 | |
PD @ TC = 25°C | Max. Power Dissipation | 75 | W |
Linear Derating Factor | 0.6 | W/°C | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 76 | mJ |
IAR | Avalanche Current | 3.4 | A |
EAR | Repetitive Avalanche Energy | 7.5 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 92 | mJ |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | oC |
Pckg. Mounting Surface Temp. | 300 (for 5s) | ||
Weight | 1.0 (Typical) | g |