Features: ·Single Event Effect (SEE) Hardened·Ultra Low RDS(on)·Low Total Gate Charge·Proton Tolerant·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Surface Mount·Ceramic Package·Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25 Continuous Drain Cu...
IRHNJ57Z30: Features: ·Single Event Effect (SEE) Hardened·Ultra Low RDS(on)·Low Total Gate Charge·Proton Tolerant·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Surface Mount·Ceramic Package·...
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Features: · Radiation Hardened up to 1 x 105 Rads (Si)· Single Event Burnout (SEB) Hardened· Singl...
Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton T...
Parameter | Units | ||
ID @ VGS = 12V, TC = 25 | Continuous Drain Current | 22* | A |
ID @ VGS = 12V, TC = 100 | Continuous Drain Current | 22* | |
IDM | Pulsed Drain Current | 88 | |
PD @ TC = 25 | Max. Power Dissipation | 75 | W |
Linear Derating Factor | 0.6 | W/ | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 155 | mJ |
IAR | Avalanche Current | 22 | A |
EAR | Repetitive Avalanche Energy | 7.5 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 1.7 | V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | |
Lead Temperature | 300 (for 5s) | ||
Weight | 1.0 (Typical) | g |
International Rectifier's R5TM technology IRHNJ57Z30 provides high performance power MOSFETs for space applications. These devices IRHNJ57Z30 have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHNJ57Z30 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.