Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Curre...
IRHNJ57234SE: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package· Light W...
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Features: · Radiation Hardened up to 1 x 105 Rads (Si)· Single Event Burnout (SEB) Hardened· Singl...
Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton T...
Parameter | Units | ||
ID @ VGS = 12V, TC = 25°C | Continuous Drain Current | 10 | A |
ID @ VGS = 12V, TC = 100°C | Continuous Drain Current | 6.4 | |
IDM | Pulsed Drain Current ➀ | 40 | |
PD @ TC = 25°C | Max. Power Dissipation | 75 | W |
Linear Derating Factor | 0.6 | W/°C | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy ➁ | 58 | mJ |
IAR | Avalanche Current ➀ | 10 | A |
EAR | Repetitive Avalanche Energy ➀ | 7.5 | mJ |
dv/dt | Peak Diode Recovery dv/dt ➂ | 2.4 | V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | °C |
Pckg. Mounting Surface Temp. | 300 (for 5s) | ||
Weight | 1.0(Typical) | g |