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IRHNJ57133SE

Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = -12V, TC = 2...

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SeekIC No. : 004378103 Detail

IRHNJ57133SE: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic...

IRHNJ57133SE Data Sheet

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Part Number:
IRHNJ57133SE
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Ultra Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Ceramic Package
· Light Weight


Specifications

  Parameter   Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current 20 A
ID @ VGS = -12V, TC = 100°C Continuous Drain Current 12.5 A
IDM Pulsed Drain Current ➀ 80 A
PD @ TC = 25°C Max. Power Dissipation 75 W
  Linear Derating Factor 0.6 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ➁ 65 mJ
IAR Avalanche Current ➀ 20 A
EAR Repetitive Avalanche Energy ➀ 7.5 mJ
dv/dt Peak Diode Recovery dv/dt ➂ 7.7 V/ns
TJ,TSTG Operating Junction
Storage Temperature Range		 -55 to 150
  Lead Temperature 300 (for 5s)
  Weight 1.0(Typical ) g



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