IRHNJ57130

Features: ·Single Event Effect (SEE) Hardened·Ultra Low RDS(on)·Low Total Gate Charge·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Surface Mount·Ceramic Package·Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25 Continuous Drain Current 22* A ...

product image

IRHNJ57130 Picture
SeekIC No. : 004378102 Detail

IRHNJ57130: Features: ·Single Event Effect (SEE) Hardened·Ultra Low RDS(on)·Low Total Gate Charge·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Surface Mount·Ceramic Package·Light WeightSpec...

floor Price/Ceiling Price

Part Number:
IRHNJ57130
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/10/30

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·Single Event Effect (SEE) Hardened
·Ultra Low RDS(on)
·Low Total Gate Charge
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Surface Mount
·Ceramic Package
·Light Weight



Specifications

Parameter   Units
ID @ VGS = 12V, TC = 25 Continuous Drain Current 22* A
ID @ VGS = 12V, TC = 100 Continuous Drain Current 16
IDM Pulsed Drain Current 88
PD @ TC = 25 Max. Power Dissipation 75 W
Linear Derating Factor 0.6 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 70 mJ
IAR Avalanche Current 22 A
EAR Repetitive Avalanche Energy 7.5 mJ
dv/dt Peak Diode Recovery dv/dt 1.4 V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 150
Lead Temperature 300 (for 5s)
Weight 1.0 (Typical) g



Description

International Rectifier's R5TM technology IRHNJ57130 provides high performance power MOSFETs for space applications. These devices IRHNJ57130 have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHNJ57130 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Connectors, Interconnects
Inductors, Coils, Chokes
Cables, Wires
RF and RFID
Industrial Controls, Meters
View more