IRHNB7460SE

      The IRHNB7460SE is a kind of International Rectifier's RADHardTM HEXFET@ MOSFET technology provides high performance power MOSFETs for space applications. This IRHNB7460SE has over a decade of proven performance and reliability in satellite applications. These devices IRHNB7460SE have been characterized for both Total Dose and Single Event Effects The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHNB7460SE retain all of the wellestablished advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and  temperature stability of electrical parameters.
      The features of IRHNB7460SE are Single Event Effect (SEE) Hardened, Ultra Low RDS(on), Low Total Gate Charge, Proton Tolerant, Simple Drive Requirements, Ease of Paralleling, Hermetically Sealed, Surface Mount, Light Weight
      The parameters of the IRHNB7460SE are VGS (Gate-to-Source Voltage)=±20V, ID @ TC= 25°C   (Continuous Drain Current, VGS @ 12V)=20A, ID @ TC =100°C (Continuous Drain Current, VGS @ 12V )=12A,  IDM (Pulsed Drain Current)=80A, PD (@Tc = 25°C Power Dissipation)=300W, EAS (Single Pulse Avalanche Energy)=500mJ, IAR( Avalanche Current)= 20A, EAR (Repetitive Avalanche Energy)=30mJ, dv/dt( Peak Diode Recovery dv/dt) =3.8V/ns, TJ (Operating Junction and)= -55  to + 150°C=TSTG, RJC( Junction-to-Case )=0.42°C/W, RthJ-PCB( Junction-to-PC board )=1.6°C/W(soldered to 2 inch square clad PC board).