IRHNB7360SE

The  IRHNB360SE is a kind of International Rectitier's RADHardTM HEXFET@ MOSFET technology provides high performance power MOSFETs for space applications. This IRHNB360SE has over a decade of proven performance and reliability in satellite applications. These devices IRHNB360SE have been characterized for both Total Dose and Single Event Effects The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHNB360SE retain all of the well  established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.

The Features of IRHNB360SE are Single Event Effect (SEE) Hardened, Ultre Low, Low Tolel Gale Charge, Proton Tolerant, Simple Drive Requirements, Ease of Paralleling, Hermeticelly Sealed, Surface Mount, Light Weight.

The parameters of the IRHNB360SE are VGS (Gate-to-Source Voltage)=±20V, ID @ Tc= 25°C (Continuous Drain Current, VGS @ 12V)=24A, ID @ Tc = 100°C (Continuous Drain Current, VGS @12V)=15A, IDM (Pulsed Drain Current)=96A, EAS (Single Pulse Avalanche Energy)=500mJ, PD (@Tc= 25°C Power Dissipation)=300W, IAR( Avalanche Current)=24A, EAR (Repetitive Avalanche Energy)=30mJ, dv/dt( Peak Diode Recovery dv/dt) =3.0V/ns, TJ (Operating Junction and)= -55 to + 150°C=TSTG(Storage Temperature Range), (Soldering Temperature, for 5 seconds )=300 (3.5g )°C, RJC( Junction-to-Case )=0.42(max)°C/W, RthJ-PCB(Junction-to-PC board)=1.6(typ)°C/W(soldered to a 2 inch aquare clad PC board).